ZTX849STZ Overview

The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 1A 1V.With a collector emitter saturation voltage of 180mV, it offers maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 220mV @ 200mA, 5A.A 5A continuous collector voltage is necessary to achieve high efficiency.The emitter base voltage can be kept at 6V for high efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (5A).In this part, there is a transition frequency of 100MHz.Collector current can be as low as 5A volts at its maximum.

ZTX849STZ Features

the DC current gain for this device is 100 @ 1A 1V
a collector emitter saturation voltage of 180mV
the vce saturation(Max) is 220mV @ 200mA, 5A
the emitter base voltage is kept at 6V
the current rating of this device is 5A
a transition frequency of 100MHz

ZTX849STZ Applications

There are a lot of Diodes Incorporated ZTX849STZ applications of single BJT transistors.

• Inverter
• Muting
• Interface
• Driver