NSVBCP69T1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
NSVBCP69T1G Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
8 Weeks
Lifecycle Status
ACTIVE (Last Updated: 2 days ago)
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Surface Mount
YES
Number of Pins
4
Operating Temperature
-65°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2008
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Subcategory
Other Transistors
Max Power Dissipation
1.5W
Pin Count
4
Configuration
Single
Power - Max
1.5W
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
500mV
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
85 @ 500mA 1V
Current - Collector Cutoff (Max)
10μA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 100mA, 1A
Collector Emitter Breakdown Voltage
20V
Frequency - Transition
60MHz
Collector Base Voltage (VCBO)
25V
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.075200
$0.0752
500
$0.055294
$27.647
1000
$0.046078
$46.078
2000
$0.042274
$84.548
5000
$0.039508
$197.54
10000
$0.036752
$367.52
15000
$0.035543
$533.145
50000
$0.034949
$1747.45
NSVBCP69T1G Product Details
NSVBCP69T1G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 85 @ 500mA 1V.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.When collector current reaches its maximum, it can reach 1A volts.
NSVBCP69T1G Features
the DC current gain for this device is 85 @ 500mA 1V the vce saturation(Max) is 500mV @ 100mA, 1A
NSVBCP69T1G Applications
There are a lot of ON Semiconductor NSVBCP69T1G applications of single BJT transistors.