BCP56T1G Overview

This device has a DC current gain of 40 @ 150mA 2V, which is the ratio between the base current and the collector current.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 500mV, which allows maximum flexibilSingle BJT transistory in design.A VCE saturation (Max) of 500mV @ 50mA, 500mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.As you can see, the part has a transition frequency of 130MHz.Single BJT transistor can take a breakdown input voltage of 80V volts.The maximum collector current is 1A volts.

BCP56T1G Features

the DC current gain for this device is 40 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 130MHz

BCP56T1G Applications

There are a lot of ON Semiconductor BCP56T1G applications of single BJT transistors.

• Inverter
• Interface
• Driver
• Muting