BUJ303AX,127 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from WeEn Semiconductors stock available on our website
SOT-23
BUJ303AX,127 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack, Isolated Tab
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tube
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Terminal Position
SINGLE
Reach Compliance Code
not_compliant
Base Part Number
BUJ302A
Reference Standard
IEC-60134
JESD-30 Code
R-PSFM-T3
Number of Elements
1
Configuration
SINGLE
Power - Max
32W
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
10 @ 5mA 5V
Current - Collector Cutoff (Max)
100μA
JEDEC-95 Code
TO-220AB
Vce Saturation (Max) @ Ib, Ic
1.5V @ 600mA, 3A
Voltage - Collector Emitter Breakdown (Max)
500V
Current - Collector (Ic) (Max)
5A
RoHS Status
RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.229754
$0.229754
10
$0.216749
$2.16749
100
$0.204480
$20.448
500
$0.192906
$96.453
1000
$0.181986
$181.986
BUJ303AX,127 Product Details
BUJ303AX,127 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 10 @ 5mA 5V.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1.5V @ 600mA, 3A.There is a 500V maximal voltage in the device due to collector-emitter breakdown.
BUJ303AX,127 Features
the DC current gain for this device is 10 @ 5mA 5V the vce saturation(Max) is 1.5V @ 600mA, 3A
BUJ303AX,127 Applications
There are a lot of WeEn Semiconductors BUJ303AX,127 applications of single BJT transistors.