PMST6428,115 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website
SOT-23
PMST6428,115 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SC-70, SOT-323
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2009
Series
Automotive, AEC-Q101
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
HTS Code
8541.21.00.95
Max Power Dissipation
200mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
[email protected] Reflow Temperature-Max (s)
40
Pin Count
3
Number of Elements
1
Element Configuration
Single
Transistor Application
SWITCHING
Gain Bandwidth Product
700MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
50V
Max Collector Current
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce
250 @ 100μA 5V
Current - Collector Cutoff (Max)
10nA ICBO
Vce Saturation (Max) @ Ib, Ic
600mV @ 5mA, 100mA
Collector Emitter Breakdown Voltage
50V
Current - Collector (Ic) (Max)
100mA
Max Frequency
700MHz
Transition Frequency
100MHz
Collector Base Voltage (VCBO)
60V
Emitter Base Voltage (VEBO)
6V
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.218000
$0.218
10
$0.205660
$2.0566
100
$0.194019
$19.4019
500
$0.183037
$91.5185
1000
$0.172676
$172.676
PMST6428,115 Product Details
PMST6428,115 Overview
In this device, the DC current gain is 250 @ 100μA 5V, which is the ratio between the base current and the collector current.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 600mV @ 5mA, 100mA.The base voltage of the emitter can be kept at 6V to achieve high efficiency.As a result, the part has a transition frequency of 100MHz.The maximum collector current is 100mA volts.
PMST6428,115 Features
the DC current gain for this device is 250 @ 100μA 5V the vce saturation(Max) is 600mV @ 5mA, 100mA the emitter base voltage is kept at 6V a transition frequency of 100MHz
PMST6428,115 Applications
There are a lot of Nexperia USA Inc. PMST6428,115 applications of single BJT transistors.