2SB1204S-E Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 140 @ 500mA 2V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 200mA, 4A.Emitter base voltages of -6V can achieve high levels of efficiency.Collector current can be as low as 8A volts at its maximum.
2SB1204S-E Features
the DC current gain for this device is 140 @ 500mA 2V
the vce saturation(Max) is 500mV @ 200mA, 4A
the emitter base voltage is kept at -6V
2SB1204S-E Applications
There are a lot of ON Semiconductor 2SB1204S-E applications of single BJT transistors.
- Muting
- Interface
- Inverter
- Driver
