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KTC3198-GR A1G

KTC3198-GR A1G

KTC3198-GR A1G

Taiwan Semiconductor Corporation

KTC3198-GR A1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Taiwan Semiconductor Corporation stock available on our website

SOT-23

KTC3198-GR A1G Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 24 Weeks
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package TO-92
Operating Temperature -55°C~150°C TJ
Packaging Tape & Box (TB)
Published 2014
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 500mW
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 2mA 6V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 250mV @ 10mA, 100mA
Voltage - Collector Emitter Breakdown (Max) 50V
Current - Collector (Ic) (Max) 150mA
Frequency - Transition 80MHz
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
4,000 $0.07036 $0.28144
KTC3198-GR A1G Product Details

KTC3198-GR A1G Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 70 @ 2mA 6V.A VCE saturation (Max) of 250mV @ 10mA, 100mA means Ic has reached its maximum value(saturated).There is no device package available from the supplier for this product.Device displays Collector Emitter Breakdown (50V maximal voltage).

KTC3198-GR A1G Features


the DC current gain for this device is 70 @ 2mA 6V
the vce saturation(Max) is 250mV @ 10mA, 100mA
the supplier device package of TO-92

KTC3198-GR A1G Applications


There are a lot of Taiwan Semiconductor Corporation KTC3198-GR A1G applications of single BJT transistors.

  • Inverter
  • Driver
  • Muting
  • Interface

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