KTC3198-GR A1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Taiwan Semiconductor Corporation stock available on our website
SOT-23
KTC3198-GR A1G Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
24 Weeks
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package
TO-92
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Box (TB)
Published
2014
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Power - Max
500mW
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
70 @ 2mA 6V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
250mV @ 10mA, 100mA
Voltage - Collector Emitter Breakdown (Max)
50V
Current - Collector (Ic) (Max)
150mA
Frequency - Transition
80MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
4,000
$0.07036
$0.28144
KTC3198-GR A1G Product Details
KTC3198-GR A1G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 70 @ 2mA 6V.A VCE saturation (Max) of 250mV @ 10mA, 100mA means Ic has reached its maximum value(saturated).There is no device package available from the supplier for this product.Device displays Collector Emitter Breakdown (50V maximal voltage).
KTC3198-GR A1G Features
the DC current gain for this device is 70 @ 2mA 6V the vce saturation(Max) is 250mV @ 10mA, 100mA the supplier device package of TO-92
KTC3198-GR A1G Applications
There are a lot of Taiwan Semiconductor Corporation KTC3198-GR A1G applications of single BJT transistors.