NSS60601MZ4T3G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 120 @ 1A 2V.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 300mV @ 600mA, 6A.Keeping the emitter base voltage at 6V can result in a high level of efficiency.The part has a transition frequency of 100MHz.In extreme cases, the collector current can be as low as 6A volts.
NSS60601MZ4T3G Features
the DC current gain for this device is 120 @ 1A 2V
the vce saturation(Max) is 300mV @ 600mA, 6A
the emitter base voltage is kept at 6V
a transition frequency of 100MHz
NSS60601MZ4T3G Applications
There are a lot of ON Semiconductor NSS60601MZ4T3G applications of single BJT transistors.
- Interface
- Driver
- Muting
- Inverter
