KSC5047TU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website
SOT-23
KSC5047TU Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-3P-3, SC-65-3
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tube
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
MATTE TIN
Terminal Position
SINGLE
Peak Reflow Temperature (Cel)
NOT APPLICABLE
Reach Compliance Code
unknown
[email protected] Reflow Temperature-Max (s)
NOT APPLICABLE
Pin Count
3
JESD-30 Code
R-PSFM-T3
Qualification Status
COMMERCIAL
Number of Elements
1
Configuration
SINGLE
Power - Max
100W
Polarity/Channel Type
NPN
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 5A 5V
Current - Collector Cutoff (Max)
100μA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 120mA, 5A
Voltage - Collector Emitter Breakdown (Max)
50V
Current - Collector (Ic) (Max)
15A
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.57000
$0.57
500
$0.5643
$282.15
1000
$0.5586
$558.6
1500
$0.5529
$829.35
2000
$0.5472
$1094.4
2500
$0.5415
$1353.75
KSC5047TU Product Details
KSC5047TU Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 40 @ 5A 5V.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 120mA, 5A.A 50V maximal voltage - Collector Emitter Breakdown is present in the device.
KSC5047TU Features
the DC current gain for this device is 40 @ 5A 5V the vce saturation(Max) is 500mV @ 120mA, 5A
KSC5047TU Applications
There are a lot of Rochester Electronics, LLC KSC5047TU applications of single BJT transistors.