STW11NK90Z

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Manufacturer part number:STW11NK90Z

Manufacturer:STMicroelectronics

Description:STW11NK90Z datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STW11NK90Z Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Lifecycle Status	ACTIVE (Last Updated: 7 months ago)
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Series	SuperMESH™
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Additional Feature	HIGH VOLTAGE
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Base Part Number	STW11N
Pin Count	3
Number of Elements	1
Power Dissipation-Max	200W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	200W
Turn On Delay Time	30 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	980m Ω @ 4.6A, 10V
Vgs(th) (Max) @ Id	4.5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds	3000pF @ 25V
Current - Continuous Drain (Id) @ 25°C	9.2A Tc
Gate Charge (Qg) (Max) @ Vgs	115nC @ 10V
Rise Time	19ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	50 ns
Turn-Off Delay Time	76 ns
Continuous Drain Current (ID)	9.2A
Threshold Voltage	3.75V
JEDEC-95 Code	TO-247AC
Gate to Source Voltage (Vgs)	30V
Drain-source On Resistance-Max	0.98Ohm
Drain to Source Breakdown Voltage	900V
Avalanche Energy Rating (Eas)	400 mJ
Height	20.15mm
Length	15.75mm
Width	5.15mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free