FDN358P

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FDN358P

Manufacturer part number:FDN358P

Manufacturer:ON Semiconductor

Description:FDN358P datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:FDN358P Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	10 Weeks
Lifecycle Status	ACTIVE (Last Updated: 6 days ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Number of Pins	3
Weight	30mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2003
Series	PowerTrench®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Resistance	125MOhm
Terminal Finish	Tin (Sn)
Subcategory	Other Transistors
Voltage - Rated DC	-30V
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Current Rating	-1.5A
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	500mW Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	500mW
Turn On Delay Time	5 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	125m Ω @ 1.5A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	182pF @ 15V
Current - Continuous Drain (Id) @ 25°C	1.5A Ta
Gate Charge (Qg) (Max) @ Vgs	5.6nC @ 10V
Rise Time	13ns
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	13 ns
Turn-Off Delay Time	12 ns
Continuous Drain Current (ID)	1.5A
Threshold Voltage	-1.9V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	-30V
Dual Supply Voltage	-30V
Max Junction Temperature (Tj)	150°C
Nominal Vgs	-1.9 V
Height	1.22mm
Length	2.92mm
Width	3.05mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free