FDMS8690 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
SOT-23
FDMS8690 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
8-PowerWDFN
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
PowerTrench®
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Technology
MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
compliant
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Power Dissipation-Max
2.5W Ta 37.8W Tc
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
9m Ω @ 14A, 10V
Vgs(th) (Max) @ Id
3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1680pF @ 15V
Current - Continuous Drain (Id) @ 25°C
14A Ta 27A Tc
Gate Charge (Qg) (Max) @ Vgs
27nC @ 10V
Drain to Source Voltage (Vdss)
30V
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
RoHS Status
RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.84000
$0.84
500
$0.8316
$415.8
1000
$0.8232
$823.2
1500
$0.8148
$1222.2
2000
$0.8064
$1612.8
2500
$0.798
$1995
FDMS8690 Product Details
FDMS8690 Description
FDMS8690 is a 30v N-Channel PowerTrench? MOSFET. The onsemi FDMS8690 has been designed specifically to improve the efficiency of DC/DC converters. Using new techniques in MOSFET construction, the various components of gate charge and capacitance have been optimized to reduce switching losses. Low gate resistance and very low Miller charge enable excellent performance with both adaptive and fixed dead time gate drive circuits. Very low rDS(on) has been maintained to provide an extremely versatile device.
FDMS8690 Features
Max rDs(on) = 9.0m2 atVcs= 10V, lp= 14.0A
Max rDs(on)= 12.5mQ at Vss =4.5V,Ip= 11.5A
High-performance trench technology for extremely low rDs(n) and gate charge