FDB7030L Description

FDB7030L is a 30v N-Channel Logic Level Enhancement Mode Field Effect Transistor. The N-Channel logic level enhancement mode power field effect transistor FDB7030L is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high-density process is especially tailored to minimize on-state resistance. The FDB7030L is particularly suited for low voltage applications such as DC/DC converters and high-efficiency switching circuits where fast switching, low in-line power loss, and resistance to transients are needed.

FDB7030L Features

• 100A, 30 V. RDS(ON)=0.007Ω @Vgs=10V

                         RDS(ON)=0.010Ω @Vgs=5 V.

• Critical DC electrical parameters specified at elevated temperature

• A rugged internal source-drain diode can eliminate the need for an extermal Zener diode transient suppressor

• High-density cell design for extremely low RDS(ON)

• 175°C maximum junction temperature rating

FDB7030L Applications

• Cellular phones 

• Laptop computers

• Photovoltaic systems 

• Wind turbines

• High-efficiency switching circuits