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TK7P60W,RVQ

TK7P60W,RVQ

TK7P60W,RVQ

Toshiba Semiconductor and Storage

MOSFET N CH 600V 7A DPAK

SOT-23

TK7P60W,RVQ Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 16 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2014
Series DTMOSIV
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 60W Tc
Element Configuration Single
Power Dissipation 60W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 600m Ω @ 3.5A, 10V
Vgs(th) (Max) @ Id 3.7V @ 350μA
Input Capacitance (Ciss) (Max) @ Vds 490pF @ 300V
Current - Continuous Drain (Id) @ 25°C 7A Ta
Gate Charge (Qg) (Max) @ Vgs 15nC @ 10V
Rise Time 18ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 7 ns
Turn-Off Delay Time 55 ns
Continuous Drain Current (ID) 7A
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 600V
FET Feature Super Junction
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.328864 $0.328864
10 $0.310249 $3.10249
100 $0.292688 $29.2688
500 $0.276121 $138.0605
1000 $0.260491 $260.491

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