PSMN3R0-30YL,115

new-10%

Manufacturer part number:PSMN3R0-30YL,115

Manufacturer:Nexperia USA Inc.

Description:PSMN3R0 Series 30 V 3 mOhm SMT N-Channel Logic Level MOSFET - LFPAK56

Case Package:SOT-23

Datasheet:PSMN3R0-30YL,115 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mounting Type	Surface Mount
Package / Case	SC-100, SOT-669
Surface Mount	YES
Number of Pins	4
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2011
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
Pin Count	4
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	81W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	81W
Case Connection	DRAIN
Turn On Delay Time	34 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	3m Ω @ 15A, 10V
Vgs(th) (Max) @ Id	2.15V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	2822pF @ 12V
Current - Continuous Drain (Id) @ 25°C	100A Tc
Gate Charge (Qg) (Max) @ Vgs	45.8nC @ 10V
Rise Time	58ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	21 ns
Turn-Off Delay Time	50 ns
Continuous Drain Current (ID)	100A
JEDEC-95 Code	MO-235
Gate to Source Voltage (Vgs)	20V
Max Dual Supply Voltage	30V
Drain to Source Breakdown Voltage	30V
Avalanche Energy Rating (Eas)	75 mJ
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free