PZT4403,115 Overview

In this device, the DC current gain is 100 @ 150mA 1V, which is the ratio between the base current and the collector current.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 750mV @ 50mA, 500mA.With the emitter base voltage set at 6V, an efficient operation can be achieved.In this part, there is a transition frequency of 200MHz.Single BJT transistor can take a breakdown input voltage of 40V volts.Single BJT transistor is possible for the collector current to fall as low as 600mA volts at Single BJT transistors maximum.

PZT4403,115 Features

the DC current gain for this device is 100 @ 150mA 1V
the vce saturation(Max) is 750mV @ 50mA, 500mA
the emitter base voltage is kept at 6V
a transition frequency of 200MHz

PZT4403,115 Applications

There are a lot of Nexperia USA Inc. PZT4403,115 applications of single BJT transistors.

• Interface
• Muting
• Inverter
• Driver