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2N5190G

2N5190G

2N5190G

ON Semiconductor

2N5190G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

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2N5190G Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 2 Weeks
Lifecycle Status ACTIVE (Last Updated: 12 hours ago)
Mounting Type Through Hole
Package / Case TO-225AA, TO-126-3
Surface Mount NO
Number of Pins 3
Weight 4.535924g
Transistor Element Material SILICON
Operating Temperature -65°C~150°C TJ
Packaging Bulk
Published 2000
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC 40V
Max Power Dissipation 40W
Peak Reflow Temperature (Cel) 260
Current Rating 4A
Frequency 2MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number 2N5190
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 40W
Transistor Application SWITCHING
Halogen Free Halogen Free
Gain Bandwidth Product 2MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 40V
Max Collector Current 4A
DC Current Gain (hFE) (Min) @ Ic, Vce 25 @ 1.5A 2V
Current - Collector Cutoff (Max) 1mA
Vce Saturation (Max) @ Ib, Ic 1.4V @ 1A, 4A
Collector Emitter Breakdown Voltage 40V
Transition Frequency 2MHz
Collector Base Voltage (VCBO) 40V
Emitter Base Voltage (VEBO) 5V
hFE Min 25
Height 6.35mm
Length 6.35mm
Width 6.35mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $3.855040 $3.85504
10 $3.636830 $36.3683
100 $3.430972 $343.0972
500 $3.236766 $1618.383
1000 $3.053553 $3053.553
2N5190G Product Details

2N5190G Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 25 @ 1.5A 2V.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1.4V @ 1A, 4A.The emitter base voltage can be kept at 5V for high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 4A.In the part, the transition frequency is 2MHz.Single BJT transistor is possible for the collector current to fall as low as 4A volts at Single BJT transistors maximum.

2N5190G Features


the DC current gain for this device is 25 @ 1.5A 2V
the vce saturation(Max) is 1.4V @ 1A, 4A
the emitter base voltage is kept at 5V
the current rating of this device is 4A
a transition frequency of 2MHz

2N5190G Applications


There are a lot of ON Semiconductor 2N5190G applications of single BJT transistors.

  • Inverter
  • Muting
  • Interface
  • Driver

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