JANTXV2N3019 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website
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JANTXV2N3019 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
23 Weeks
Lifecycle Status
IN PRODUCTION (Last Updated: 1 month ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-205AA, TO-5-3 Metal Can
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-65°C~200°C TJ
Packaging
Bulk
Published
2007
Series
Military, MIL-PRF-19500/391
JESD-609 Code
e0
Pbfree Code
no
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn/Pb)
Subcategory
Other Transistors
Max Power Dissipation
800mW
Terminal Position
BOTTOM
Terminal Form
WIRE
Pin Count
2
Qualification Status
Qualified
Number of Elements
1
Configuration
SINGLE
Power Dissipation
800mW
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
80V
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
50 @ 500mA 10V
Current - Collector Cutoff (Max)
10μA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage
80V
Transition Frequency
100MHz
Collector Base Voltage (VCBO)
140V
Emitter Base Voltage (VEBO)
7V
Radiation Hardening
No
RoHS Status
Non-RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
100
$23.90620
$2390.62
JANTXV2N3019 Product Details
JANTXV2N3019 Overview
DC current gain in this device equals 50 @ 500mA 10V, which is the ratio of the base current to the collector current.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 50mA, 500mA.Keeping the emitter base voltage at 7V can result in a high level of efficiency.As a result, the part has a transition frequency of 100MHz.In extreme cases, the collector current can be as low as 1A volts.
JANTXV2N3019 Features
the DC current gain for this device is 50 @ 500mA 10V the vce saturation(Max) is 500mV @ 50mA, 500mA the emitter base voltage is kept at 7V a transition frequency of 100MHz
JANTXV2N3019 Applications
There are a lot of Microsemi Corporation JANTXV2N3019 applications of single BJT transistors.