2SD2142KT146 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website
SOT-23
2SD2142KT146 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
13 Weeks
Contact Plating
Copper, Silver, Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2008
JESD-609 Code
e1
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
TIN SILVER COPPER
HTS Code
8541.21.00.75
Subcategory
Other Transistors
Voltage - Rated DC
32V
Max Power Dissipation
200mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
300mA
[email protected] Reflow Temperature-Max (s)
10
Base Part Number
2SD2142
Pin Count
3
Number of Elements
1
Polarity
NPN
Element Configuration
Single
Power Dissipation
200mW
Transistor Application
AMPLIFIER
Gain Bandwidth Product
200MHz
Transistor Type
NPN - Darlington
Collector Emitter Voltage (VCEO)
30V
Max Collector Current
300mA
DC Current Gain (hFE) (Min) @ Ic, Vce
10000 @ 100mA 5V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
1.5V @ 100μA, 100mA
Collector Emitter Breakdown Voltage
30V
Transition Frequency
200MHz
Max Breakdown Voltage
30V
Collector Base Voltage (VCBO)
30V
Emitter Base Voltage (VEBO)
10V
hFE Min
5000
Continuous Collector Current
300mA
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.067040
$0.06704
500
$0.049294
$24.647
1000
$0.041078
$41.078
2000
$0.037687
$75.374
5000
$0.035221
$176.105
10000
$0.032764
$327.64
15000
$0.031687
$475.305
50000
$0.031157
$1557.85
2SD2142KT146 Product Details
2SD2142KT146 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 10000 @ 100mA 5V.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1.5V @ 100μA, 100mA.Single BJT transistor is essential to maintain the continuous collector voltage at 300mA to achieve high efficiency.If the emitter base voltage is kept at 10V, a high level of efficiency can be achieved.This device has a current rating of 300mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.200MHz is present in the transition frequency.Breakdown input voltage is 30V volts.Maximum collector currents can be below 300mA volts.
2SD2142KT146 Features
the DC current gain for this device is 10000 @ 100mA 5V the vce saturation(Max) is 1.5V @ 100μA, 100mA the emitter base voltage is kept at 10V the current rating of this device is 300mA a transition frequency of 200MHz
2SD2142KT146 Applications
There are a lot of ROHM Semiconductor 2SD2142KT146 applications of single BJT transistors.