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2SD2142KT146

2SD2142KT146

2SD2142KT146

ROHM Semiconductor

2SD2142KT146 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website

SOT-23

2SD2142KT146 Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 13 Weeks
Contact Plating Copper, Silver, Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2008
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish TIN SILVER COPPER
HTS Code 8541.21.00.75
Subcategory Other Transistors
Voltage - Rated DC 32V
Max Power Dissipation 200mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 300mA
[email protected] Reflow Temperature-Max (s) 10
Base Part Number 2SD2142
Pin Count 3
Number of Elements 1
Polarity NPN
Element Configuration Single
Power Dissipation 200mW
Transistor Application AMPLIFIER
Gain Bandwidth Product 200MHz
Transistor Type NPN - Darlington
Collector Emitter Voltage (VCEO) 30V
Max Collector Current 300mA
DC Current Gain (hFE) (Min) @ Ic, Vce 10000 @ 100mA 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 1.5V @ 100μA, 100mA
Collector Emitter Breakdown Voltage 30V
Transition Frequency 200MHz
Max Breakdown Voltage 30V
Collector Base Voltage (VCBO) 30V
Emitter Base Voltage (VEBO) 10V
hFE Min 5000
Continuous Collector Current 300mA
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.067040 $0.06704
500 $0.049294 $24.647
1000 $0.041078 $41.078
2000 $0.037687 $75.374
5000 $0.035221 $176.105
10000 $0.032764 $327.64
15000 $0.031687 $475.305
50000 $0.031157 $1557.85
2SD2142KT146 Product Details

2SD2142KT146 Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 10000 @ 100mA 5V.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1.5V @ 100μA, 100mA.Single BJT transistor is essential to maintain the continuous collector voltage at 300mA to achieve high efficiency.If the emitter base voltage is kept at 10V, a high level of efficiency can be achieved.This device has a current rating of 300mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.200MHz is present in the transition frequency.Breakdown input voltage is 30V volts.Maximum collector currents can be below 300mA volts.

2SD2142KT146 Features


the DC current gain for this device is 10000 @ 100mA 5V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
the emitter base voltage is kept at 10V
the current rating of this device is 300mA
a transition frequency of 200MHz

2SD2142KT146 Applications


There are a lot of ROHM Semiconductor 2SD2142KT146 applications of single BJT transistors.

  • Inverter
  • Interface
  • Driver
  • Muting

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