2N5401YBU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
2N5401YBU Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
6 Weeks
Lifecycle Status
ACTIVE (Last Updated: 3 days ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Number of Pins
3
Weight
179mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Bulk
Published
2012
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Voltage - Rated DC
-160V
Max Power Dissipation
625mW
Terminal Position
BOTTOM
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Current Rating
-600mA
Frequency
400MHz
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
2N5401
Qualification Status
Not Qualified
Number of Elements
1
Element Configuration
Single
Power Dissipation
625mW
Transistor Application
SWITCHING
Gain Bandwidth Product
400MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
150V
Max Collector Current
600mA
DC Current Gain (hFE) (Min) @ Ic, Vce
60 @ 10mA 5V
Vce Saturation (Max) @ Ib, Ic
500mV @ 5mA, 50mA
Collector Emitter Breakdown Voltage
150V
Transition Frequency
100MHz
Collector Base Voltage (VCBO)
160V
Emitter Base Voltage (VEBO)
5V
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.27000
$0.27
10
$0.22400
$2.24
100
$0.11970
$11.97
500
$0.07934
$39.67
1,000
$0.05452
$0.05452
2N5401YBU Product Details
2N5401YBU Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 60 @ 10mA 5V.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 5mA, 50mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.Its current rating is -600mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.A transition frequency of 100MHz is present in the part.During maximum operation, collector current can be as low as 600mA volts.
2N5401YBU Features
the DC current gain for this device is 60 @ 10mA 5V the vce saturation(Max) is 500mV @ 5mA, 50mA the emitter base voltage is kept at 5V the current rating of this device is -600mA a transition frequency of 100MHz
2N5401YBU Applications
There are a lot of ON Semiconductor 2N5401YBU applications of single BJT transistors.