2N5550RLRPG Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 60 @ 10mA 5V.A collector emitter saturation voltage of 250mV allows maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 250mV @ 5mA, 50mA.Emitter base voltages of 6V can achieve high levels of efficiency.The current rating of this fuse is 600mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.As you can see, the part has a transition frequency of 100MHz.Maximum collector currents can be below 600mA volts.
2N5550RLRPG Features
the DC current gain for this device is 60 @ 10mA 5V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
the current rating of this device is 600mA
a transition frequency of 100MHz
2N5550RLRPG Applications
There are a lot of ON Semiconductor 2N5550RLRPG applications of single BJT transistors.
- Interface
- Driver
- Muting
- Inverter
