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STD1802T4-A

STD1802T4-A

STD1802T4-A

STMicroelectronics

STD1802T4-A datasheet pdf and Transistors - Bipolar (BJT) - Single product details from STMicroelectronics stock available on our website

SOT-23

STD1802T4-A Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 8 months ago)
Contact PlatingTin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature150°C TJ
PackagingTape & Reel (TR)
JESD-609 Code e3
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Subcategory Other Transistors
Max Power Dissipation15W
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
Frequency 150MHz
[email protected] Reflow Temperature-Max (s) 30
Base Part Number STD18
Pin Count3
JESD-30 Code R-PSSO-G2
Number of Elements 1
Element ConfigurationSingle
Power Dissipation15W
Transistor Application SWITCHING
Gain Bandwidth Product150MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 60V
Max Collector Current 3A
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 100mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
JEDEC-95 Code TO-252AA
Vce Saturation (Max) @ Ib, Ic 400mV @ 150mA, 3A
Collector Emitter Breakdown Voltage60V
Transition Frequency 150MHz
Max Breakdown Voltage 60V
Collector Base Voltage (VCBO) 80V
Emitter Base Voltage (VEBO) 6V
Radiation HardeningNo
RoHS StatusROHS3 Compliant
In-Stock:5389 items

Pricing & Ordering

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STD1802T4-A Product Details

STD1802T4-A Overview


This device has a DC current gain of 200 @ 100mA 2V, which is the ratio between the base current and the collector current.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.An emitter's base voltage can be kept at 6V to gain high efficiency.A transition frequency of 150MHz is present in the part.Single BJT transistor can be broken down at a voltage of 60V volts.Collector current can be as low as 3A volts at its maximum.

STD1802T4-A Features


the DC current gain for this device is 200 @ 100mA 2V
the vce saturation(Max) is 400mV @ 150mA, 3A
the emitter base voltage is kept at 6V
a transition frequency of 150MHz

STD1802T4-A Applications


There are a lot of STMicroelectronics STD1802T4-A applications of single BJT transistors.

  • Muting
  • Inverter
  • Interface
  • Driver

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