2N6517TA Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 20 @ 50mA 10V.A collector emitter saturation voltage of 1V allows maximum design flexibility.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1V @ 5mA, 50mA.With the emitter base voltage set at 6V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 500mA for this device.In the part, the transition frequency is 40MHz.Input voltage breakdown is available at 350V volts.Single BJT transistor is possible to have a collector current as low as 500mA volts at Single BJT transistors maximum.
2N6517TA Features
the DC current gain for this device is 20 @ 50mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 5mA, 50mA
the emitter base voltage is kept at 6V
the current rating of this device is 500mA
a transition frequency of 40MHz
2N6517TA Applications
There are a lot of ON Semiconductor 2N6517TA applications of single BJT transistors.
- Muting
- Interface
- Driver
- Inverter
