2SB1205S-E Overview

DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 140 @ 500mA 2V DC current gain.A VCE saturation (Max) of 500mV @ 60mA, 3A means Ic has reached its maximum value(saturated).Emitter base voltages of -5V can achieve high levels of efficiency.Single BJT transistor is possible for the collector current to fall as low as 5A volts at Single BJT transistors maximum.

2SB1205S-E Features

the DC current gain for this device is 140 @ 500mA 2V
the vce saturation(Max) is 500mV @ 60mA, 3A
the emitter base voltage is kept at -5V

2SB1205S-E Applications

There are a lot of ON Semiconductor 2SB1205S-E applications of single BJT transistors.

• Inverter
• Driver
• Muting
• Interface