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2N6038G

2N6038G

2N6038G

ON Semiconductor

2N6038G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

2N6038G Datasheet PDF

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Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 2 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Contact PlatingTin
Mounting Type Through Hole
Package / Case TO-225AA, TO-126-3
Surface MountNO
Number of Pins 3
Weight 4.535924g
Transistor Element Material SILICON
Operating Temperature-65°C~150°C TJ
PackagingBulk
Published 2008
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Other Transistors
Voltage - Rated DC 60V
Max Power Dissipation40W
Peak Reflow Temperature (Cel) 260
Current Rating4A
[email protected] Reflow Temperature-Max (s) 40
Base Part Number 2N6038
Pin Count3
Number of Elements 1
Polarity NPN
Element ConfigurationSingle
Power Dissipation40W
Transistor Application AMPLIFIER
Halogen Free Halogen Free
Transistor Type NPN - Darlington
Collector Emitter Voltage (VCEO) 60V
Max Collector Current 4A
DC Current Gain (hFE) (Min) @ Ic, Vce 750 @ 2A 3V
Current - Collector Cutoff (Max) 100μA
Vce Saturation (Max) @ Ib, Ic 3V @ 40mA, 4A
Collector Emitter Breakdown Voltage60V
Transition Frequency 25MHz
Collector Emitter Saturation Voltage2V
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) 5V
Continuous Collector Current 4A
Height 11.04mm
Length 7.74mm
Width 2.66mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:21609 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.77000$0.77
10$0.67300$6.73
100$0.51620$51.62
500$0.40804$204.02

2N6038G Product Details

2N6038G Overview


DC current gain in this device equals 750 @ 2A 3V, which is the ratio of the base current to the collector current.As it features a collector emitter saturation voltage of 2V, it allows for maximum design flexibility.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 3V @ 40mA, 4A.A constant collector voltage of 4A is necessary for high efficiency.With the emitter base voltage set at 5V, an efficient operation can be achieved.The current rating of this fuse is 4A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 25MHz.Single BJT transistor is possible to have a collector current as low as 4A volts at Single BJT transistors maximum.

2N6038G Features


the DC current gain for this device is 750 @ 2A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 3V @ 40mA, 4A
the emitter base voltage is kept at 5V
the current rating of this device is 4A
a transition frequency of 25MHz

2N6038G Applications


There are a lot of ON Semiconductor 2N6038G applications of single BJT transistors.

  • Driver
  • Muting
  • Inverter
  • Interface

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