2N6038G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
2N6038G Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
2 Weeks
Lifecycle Status
ACTIVE (Last Updated: 2 days ago)
Contact Plating
Tin
Mounting Type
Through Hole
Package / Case
TO-225AA, TO-126-3
Surface Mount
NO
Number of Pins
3
Weight
4.535924g
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Bulk
Published
2008
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
Other Transistors
Voltage - Rated DC
60V
Max Power Dissipation
40W
Peak Reflow Temperature (Cel)
260
Current Rating
4A
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
2N6038
Pin Count
3
Number of Elements
1
Polarity
NPN
Element Configuration
Single
Power Dissipation
40W
Transistor Application
AMPLIFIER
Halogen Free
Halogen Free
Transistor Type
NPN - Darlington
Collector Emitter Voltage (VCEO)
60V
Max Collector Current
4A
DC Current Gain (hFE) (Min) @ Ic, Vce
750 @ 2A 3V
Current - Collector Cutoff (Max)
100μA
Vce Saturation (Max) @ Ib, Ic
3V @ 40mA, 4A
Collector Emitter Breakdown Voltage
60V
Transition Frequency
25MHz
Collector Emitter Saturation Voltage
2V
Collector Base Voltage (VCBO)
60V
Emitter Base Voltage (VEBO)
5V
Continuous Collector Current
4A
Height
11.04mm
Length
7.74mm
Width
2.66mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.77000
$0.77
10
$0.67300
$6.73
100
$0.51620
$51.62
500
$0.40804
$204.02
2N6038G Product Details
2N6038G Overview
DC current gain in this device equals 750 @ 2A 3V, which is the ratio of the base current to the collector current.As it features a collector emitter saturation voltage of 2V, it allows for maximum design flexibility.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 3V @ 40mA, 4A.A constant collector voltage of 4A is necessary for high efficiency.With the emitter base voltage set at 5V, an efficient operation can be achieved.The current rating of this fuse is 4A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 25MHz.Single BJT transistor is possible to have a collector current as low as 4A volts at Single BJT transistors maximum.
2N6038G Features
the DC current gain for this device is 750 @ 2A 3V a collector emitter saturation voltage of 2V the vce saturation(Max) is 3V @ 40mA, 4A the emitter base voltage is kept at 5V the current rating of this device is 4A a transition frequency of 25MHz
2N6038G Applications
There are a lot of ON Semiconductor 2N6038G applications of single BJT transistors.