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BCP52TF

BCP52TF

BCP52TF

Nexperia USA Inc.

BCP52TF datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website

SOT-23

BCP52TF Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 4 Weeks
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101
Part Status Active
Pin Count 4
Power - Max 1.3W
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 63 @ 150mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max) 60V
Current - Collector (Ic) (Max) 1A
Frequency - Transition 140MHz
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.076880 $0.07688
10 $0.072529 $0.72529
100 $0.068423 $6.8423
500 $0.064550 $32.275
1000 $0.060896 $60.896
BCP52TF Product Details

BCP52TF Overview


In this device, the DC current gain is 63 @ 150mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 50mA, 500mA.Device displays Collector Emitter Breakdown (60V maximal voltage).

BCP52TF Features


the DC current gain for this device is 63 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA

BCP52TF Applications


There are a lot of Nexperia USA Inc. BCP52TF applications of single BJT transistors.

  • Driver
  • Muting
  • Interface
  • Inverter

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