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CSD23382F4

CSD23382F4

CSD23382F4

Texas Instruments

CSD23382F4 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Texas Instruments stock available on our website

SOT-23

CSD23382F4 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 6 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 3-XFDFN
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series FemtoFET™
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number CSD23382
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 500mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 28 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 76m Ω @ 500mA, 4.5V
Vgs(th) (Max) @ Id 1.1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 235pF @ 6V
Current - Continuous Drain (Id) @ 25°C 3.5A Ta
Gate Charge (Qg) (Max) @ Vgs 1.35nC @ 6V
Rise Time 25ns
Drain to Source Voltage (Vdss) 12V
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Vgs (Max) ±8V
Fall Time (Typ) 41 ns
Turn-Off Delay Time 66 ns
Continuous Drain Current (ID) 3.5A
Gate to Source Voltage (Vgs) 8V
Length 1.035mm
Width 635μm
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.51000 $0.51
500 $0.5049 $252.45
1000 $0.4998 $499.8
1500 $0.4947 $742.05
2000 $0.4896 $979.2
2500 $0.4845 $1211.25
CSD23382F4 Product Details

CSD23382F4 Description


CSD23382F4 is a kind of 66-mΩ, 12-V P-Channel FemtoFET? MOSFET providing ultralow on-state resistance and ultralow Qg and Qgd. Based on innovative technology, it is developed and optimized to minimize the footprint in many handheld and mobile applications. It provides an alternative to standard small signal MOSFETs.



CSD23382F4 Features


  • Ultralow on-state resistance

  • High operating drain current

  • Ultralow Qg and Qgd

  • Ultra-small footpeint



CSD23382F4 Applications


  • Load switch applications

  • General-purpose switching applications

  • Battery applications

  • Handheld and mobile applications


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