FCH104N60F

new-10%

Manufacturer part number:FCH104N60F

Manufacturer:ON Semiconductor

Description:MOSFET (Metal Oxide) N-Channel Tube 104m Ω @ 18.5A, 10V ±20V 5950pF @ 100V 139nC @ 10V 600V TO-247-3

Case Package:SOT-23

Datasheet:FCH104N60F Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Lifecycle Status	ACTIVE (Last Updated: 6 days ago)
Factory Lead Time	12 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Weight	6.39g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Series	HiPerFET™, Polar™
Published	2013
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Number of Elements	1
Power Dissipation-Max	357W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	357W
Turn On Delay Time	34 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	104m Ω @ 18.5A, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	5950pF @ 100V
Current - Continuous Drain (Id) @ 25°C	37A Tc
Gate Charge (Qg) (Max) @ Vgs	139nC @ 10V
Rise Time	58ns
Drain to Source Voltage (Vdss)	600V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	20 ns
Turn-Off Delay Time	98 ns
Continuous Drain Current (ID)	37A
JEDEC-95 Code	TO-247AB
Gate to Source Voltage (Vgs)	5V
Drain to Source Breakdown Voltage	650V
Avalanche Energy Rating (Eas)	809 mJ
Height	20.82mm
Length	15.87mm
Width	4.82mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant