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FCH104N60F

FCH104N60F

FCH104N60F

ON Semiconductor

MOSFET (Metal Oxide) N-Channel Tube 104m Ω @ 18.5A, 10V ±20V 5950pF @ 100V 139nC @ 10V 600V TO-247-3

SOT-23

FCH104N60F Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Lifecycle Status ACTIVE (Last Updated: 6 days ago)
Factory Lead Time 12 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Weight 6.39g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series HiPerFET™, Polar™
Published 2013
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 357W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 357W
Turn On Delay Time 34 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 104m Ω @ 18.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 5950pF @ 100V
Current - Continuous Drain (Id) @ 25°C 37A Tc
Gate Charge (Qg) (Max) @ Vgs 139nC @ 10V
Rise Time 58ns
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 20 ns
Turn-Off Delay Time 98 ns
Continuous Drain Current (ID) 37A
JEDEC-95 Code TO-247AB
Gate to Source Voltage (Vgs) 5V
Drain to Source Breakdown Voltage 650V
Avalanche Energy Rating (Eas) 809 mJ
Height 20.82mm
Length 15.87mm
Width 4.82mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $5.12000 $5.12
10 $4.57100 $45.71
450 $3.38218 $1521.981
900 $2.74230 $2468.07
1,350 $2.55948 $2.55948
FCH104N60F Product Details

FCH104N60F Description


The SUPERFET? II MOSFET is a brand new high voltage super junction (SJ) MOSFET family from ON Semiconductor that uses charge balance technology to achieve remarkable low on-resistance and low gate charge performance. This technology is designed to reduce conduction loss, improve switching performance, increase dv/dt rate, and increase avalanche energy. As a result, SUPERFET II is ideal for Soft and Hard Switching topologies such as High Voltage Full Bridge and Half-Bridge DCDC, Interleaved Boost PFC, and Boost PFC for HEVEV automobiles.

The enhanced body diode reverse recovery performance of the SUPERFET II FRFET? MOSFET can eliminate a component and improve system reliability.



FCH104N60F Features


  • UIS Capability

  • Qualified to AEC Q101 and PPAP Capable

  • This Device is Pb?Free and is RoHS Compliant

  • Typical RDS(on) = 91 m at VGS = 10 V, ID = 18.5 A

  • Typical Qg(tot) = 109 nC at VGS = 10 V, ID = 18.5 A




FCH104N60F Applications


  • Automotive On-Board Charger

  • Automotive DC/DC Converter for HEV


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