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TK12A60D(STA4,Q,M)

TK12A60D(STA4,Q,M)

TK12A60D(STA4,Q,M)

Toshiba Semiconductor and Storage

MOSFET N-CH 600V 12A TO-220SIS

SOT-23

TK12A60D(STA4,Q,M) Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 16 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3
Supplier Device Package TO-220SIS
Operating Temperature 150°C TJ
Packaging Tube
Published 2009
Series π-MOSVII
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 45W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 550mOhm @ 6A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 1800pF @ 25V
Current - Continuous Drain (Id) @ 25°C 12A Ta
Gate Charge (Qg) (Max) @ Vgs 38nC @ 10V
Rise Time 40ns
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 15 ns
Continuous Drain Current (ID) 12A
Gate to Source Voltage (Vgs) 30V
Input Capacitance 1.8nF
Rds On Max 550 mΩ
Radiation Hardening No
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.531312 $0.531312
10 $0.501237 $5.01237
100 $0.472865 $47.2865
500 $0.446099 $223.0495
1000 $0.420848 $420.848

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