TK12A60D(STA4,Q,M)

new-10%

Manufacturer part number:TK12A60D(STA4,Q,M)

Manufacturer:Toshiba Semiconductor and Storage

Description:MOSFET N-CH 600V 12A TO-220SIS

Case Package:SOT-23

Datasheet:TK12A60D(STA4,Q,M) Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack
Number of Pins	3
Supplier Device Package	TO-220SIS
Operating Temperature	150°C TJ
Packaging	Tube
Published	2009
Series	π-MOSVII
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Power Dissipation-Max	45W Tc
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	550mOhm @ 6A, 10V
Vgs(th) (Max) @ Id	4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	1800pF @ 25V
Current - Continuous Drain (Id) @ 25°C	12A Ta
Gate Charge (Qg) (Max) @ Vgs	38nC @ 10V
Rise Time	40ns
Drain to Source Voltage (Vdss)	600V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	15 ns
Continuous Drain Current (ID)	12A
Gate to Source Voltage (Vgs)	30V
Input Capacitance	1.8nF
Rds On Max	550 mΩ
Radiation Hardening	No
RoHS Status	RoHS Compliant