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2SA1179N6-TB-E

2SA1179N6-TB-E

2SA1179N6-TB-E

ON Semiconductor

2SA1179N6-TB-E datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

2SA1179N6-TB-E Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2012
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Tin (Sn)
Max Power Dissipation 200mW
Reach Compliance Code unknown
Frequency 180MHz
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 200mW
Gain Bandwidth Product 180MHz
Transistor Type PNP
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 150mA
DC Current Gain (hFE) (Min) @ Ic, Vce 135 @ 1mA 6V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 5mA, 50mA
Collector Emitter Breakdown Voltage 50V
Collector Emitter Saturation Voltage -150mV
Collector Base Voltage (VCBO) -55V
Emitter Base Voltage (VEBO) -5V
Height 1mm
Length 2.93mm
Width 1.3mm
RoHS Status RoHS Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.347934 $0.347934
10 $0.328240 $3.2824
100 $0.309660 $30.966
500 $0.292132 $146.066
1000 $0.275597 $275.597
2SA1179N6-TB-E Product Details

2SA1179N6-TB-E Overview


This device has a DC current gain of 135 @ 1mA 6V, which is the ratio between the collector current and the base current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -150mV.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.An emitter's base voltage can be kept at -5V to gain high efficiency.Maximum collector currents can be below 150mA volts.

2SA1179N6-TB-E Features


the DC current gain for this device is 135 @ 1mA 6V
a collector emitter saturation voltage of -150mV
the vce saturation(Max) is 500mV @ 5mA, 50mA
the emitter base voltage is kept at -5V

2SA1179N6-TB-E Applications


There are a lot of ON Semiconductor 2SA1179N6-TB-E applications of single BJT transistors.

  • Interface
  • Muting
  • Inverter
  • Driver

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