2SA1417T-TD-E Overview

This device has a DC current gain of 100 @ 100mA 5V, which is the ratio between the collector current and the base current.As it features a collector emitter saturation voltage of -220mV, it allows for maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -6V.Single BJT transistor can take a breakdown input voltage of 100V volts.The maximum collector current is 2A volts.

2SA1417T-TD-E Features

the DC current gain for this device is 100 @ 100mA 5V
a collector emitter saturation voltage of -220mV
the vce saturation(Max) is 400mV @ 100mA, 1A
the emitter base voltage is kept at -6V

2SA1417T-TD-E Applications

There are a lot of ON Semiconductor 2SA1417T-TD-E applications of single BJT transistors.

• Driver
• Inverter
• Muting
• Interface