2SA1419T-TD-H datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
2SA1419T-TD-H Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
2 Weeks
Lifecycle Status
ACTIVE (Last Updated: 1 week ago)
Mounting Type
Surface Mount
Package / Case
TO-243AA
Surface Mount
YES
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2012
JESD-609 Code
e6
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin/Bismuth (Sn/Bi)
HTS Code
8541.21.00.75
Max Power Dissipation
500mW
Terminal Position
SINGLE
Terminal Form
FLAT
Reach Compliance Code
not_compliant
Base Part Number
2SA1419
Pin Count
3
Number of Elements
1
Configuration
SINGLE
Case Connection
COLLECTOR
Power - Max
500mW
Halogen Free
Halogen Free
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
160V
Max Collector Current
1.5A
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 100mA 5V
Current - Collector Cutoff (Max)
1μA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage
160V
Transition Frequency
120MHz
Frequency - Transition
120MHz
Collector Base Voltage (VCBO)
180V
Emitter Base Voltage (VEBO)
6V
hFE Min
100
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.552000
$0.552
10
$0.520755
$5.20755
100
$0.491278
$49.1278
500
$0.463470
$231.735
1000
$0.437236
$437.236
2SA1419T-TD-H Product Details
2SA1419T-TD-H Overview
This device has a DC current gain of 200 @ 100mA 5V, which is the ratio between the collector current and the base current.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 50mA, 500mA.Keeping the emitter base voltage at 6V allows for a high level of efficiency.120MHz is present in the transition frequency.A maximum collector current of 1.5A volts can be achieved.
2SA1419T-TD-H Features
the DC current gain for this device is 200 @ 100mA 5V the vce saturation(Max) is 500mV @ 50mA, 500mA the emitter base voltage is kept at 6V a transition frequency of 120MHz
2SA1419T-TD-H Applications
There are a lot of ON Semiconductor 2SA1419T-TD-H applications of single BJT transistors.