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2SA1419T-TD-H

2SA1419T-TD-H

2SA1419T-TD-H

ON Semiconductor

2SA1419T-TD-H datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

2SA1419T-TD-H Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 2 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 week ago)
Mounting Type Surface Mount
Package / Case TO-243AA
Surface MountYES
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature150°C TJ
PackagingTape & Reel (TR)
Published 2012
JESD-609 Code e6
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Bismuth (Sn/Bi)
HTS Code8541.21.00.75
Max Power Dissipation500mW
Terminal Position SINGLE
Terminal FormFLAT
Reach Compliance Code not_compliant
Base Part Number 2SA1419
Pin Count3
Number of Elements 1
Configuration SINGLE
Case Connection COLLECTOR
Power - Max 500mW
Halogen Free Halogen Free
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 160V
Max Collector Current 1.5A
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 100mA 5V
Current - Collector Cutoff (Max) 1μA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage160V
Transition Frequency 120MHz
Frequency - Transition 120MHz
Collector Base Voltage (VCBO) 180V
Emitter Base Voltage (VEBO) 6V
hFE Min 100
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:11947 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.552000$0.552
10$0.520755$5.20755
100$0.491278$49.1278
500$0.463470$231.735
1000$0.437236$437.236

2SA1419T-TD-H Product Details

2SA1419T-TD-H Overview


This device has a DC current gain of 200 @ 100mA 5V, which is the ratio between the collector current and the base current.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 50mA, 500mA.Keeping the emitter base voltage at 6V allows for a high level of efficiency.120MHz is present in the transition frequency.A maximum collector current of 1.5A volts can be achieved.

2SA1419T-TD-H Features


the DC current gain for this device is 200 @ 100mA 5V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 6V
a transition frequency of 120MHz

2SA1419T-TD-H Applications


There are a lot of ON Semiconductor 2SA1419T-TD-H applications of single BJT transistors.

  • Muting
  • Driver
  • Interface
  • Inverter

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