SBC817-40LT3G Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 250 @ 100mA 1V.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Continuous collector voltages of 500mA should be maintained to achieve high efficiency.The emitter base voltage can be kept at 5V for high efficiency.Parts of this part have transition frequencies of 100MHz.A breakdown input voltage of 45V volts can be used.A maximum collector current of 500mA volts can be achieved.
SBC817-40LT3G Features
the DC current gain for this device is 250 @ 100mA 1V
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
SBC817-40LT3G Applications
There are a lot of ON Semiconductor SBC817-40LT3G applications of single BJT transistors.
- Inverter
- Muting
- Driver
- Interface
