2SB1590KT146Q datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website
SOT-23
2SB1590KT146Q Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
13 Weeks
Contact Plating
Copper, Silver, Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2005
JESD-609 Code
e1
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
TIN SILVER COPPER
Subcategory
Other Transistors
Voltage - Rated DC
-15V
Max Power Dissipation
200mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
-1A
Frequency
200MHz
[email protected] Reflow Temperature-Max (s)
10
Base Part Number
2SB1590
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
200mW
Transistor Application
SWITCHING
Gain Bandwidth Product
200MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
15V
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
120 @ 500mA 2V
Current - Collector Cutoff (Max)
500nA ICBO
Vce Saturation (Max) @ Ib, Ic
300mV @ 20mA, 400mA
Collector Emitter Breakdown Voltage
15V
Transition Frequency
200MHz
Max Breakdown Voltage
15V
Collector Base Voltage (VCBO)
15V
Emitter Base Voltage (VEBO)
6V
hFE Min
120
Continuous Collector Current
-1A
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$13.203600
$13.2036
10
$12.456226
$124.56226
100
$11.751157
$1175.1157
500
$11.085997
$5542.9985
1000
$10.458488
$10458.488
2SB1590KT146Q Product Details
2SB1590KT146Q Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 120 @ 500mA 2V DC current gain.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 300mV @ 20mA, 400mA.Single BJT transistor is recommended to keep the continuous collector voltage at -1A in order to achieve high efficiency.Emitter base voltages of 6V can achieve high levels of efficiency.This device has a current rating of -1A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.There is a transition frequency of 200MHz in the part.This device can take an input voltage of 15V volts before it breaks down.The maximum collector current is 1A volts.
2SB1590KT146Q Features
the DC current gain for this device is 120 @ 500mA 2V the vce saturation(Max) is 300mV @ 20mA, 400mA the emitter base voltage is kept at 6V the current rating of this device is -1A a transition frequency of 200MHz
2SB1590KT146Q Applications
There are a lot of ROHM Semiconductor 2SB1590KT146Q applications of single BJT transistors.