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2SA1705T-AN

2SA1705T-AN

2SA1705T-AN

ON Semiconductor

2SA1705T-AN datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

2SA1705T-AN Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case SC-71
Number of Pins 3
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2012
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)
Max Power Dissipation 900mW
Pin Count 3
Power - Max 900mW
Transistor Type PNP
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 100mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage 50V
Frequency - Transition 150MHz
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) 5V
hFE Min 100
RoHS Status RoHS Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $2.845888 $2.845888
10 $2.684800 $26.848
100 $2.532830 $253.283
500 $2.389462 $1194.731
1000 $2.254210 $2254.21
2SA1705T-AN Product Details

2SA1705T-AN Overview


In this device, the DC current gain is 200 @ 100mA 2V, which is the ratio between the base current and the collector current.When VCE saturation is 500mV @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).With the emitter base voltage set at 5V, an efficient operation can be achieved.When collector current reaches its maximum, it can reach 1A volts.

2SA1705T-AN Features


the DC current gain for this device is 200 @ 100mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V

2SA1705T-AN Applications


There are a lot of ON Semiconductor 2SA1705T-AN applications of single BJT transistors.

  • Inverter
  • Interface
  • Muting
  • Driver

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