2SA1705T-AN datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
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2SA1705T-AN Datasheet
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Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
SC-71
Number of Pins
3
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2012
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Terminal Finish
Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)
Max Power Dissipation
900mW
Pin Count
3
Power - Max
900mW
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
50V
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 100mA 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage
50V
Frequency - Transition
150MHz
Collector Base Voltage (VCBO)
60V
Emitter Base Voltage (VEBO)
5V
hFE Min
100
RoHS Status
RoHS Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$2.845888
$2.845888
10
$2.684800
$26.848
100
$2.532830
$253.283
500
$2.389462
$1194.731
1000
$2.254210
$2254.21
2SA1705T-AN Product Details
2SA1705T-AN Overview
In this device, the DC current gain is 200 @ 100mA 2V, which is the ratio between the base current and the collector current.When VCE saturation is 500mV @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).With the emitter base voltage set at 5V, an efficient operation can be achieved.When collector current reaches its maximum, it can reach 1A volts.
2SA1705T-AN Features
the DC current gain for this device is 200 @ 100mA 2V the vce saturation(Max) is 500mV @ 50mA, 500mA the emitter base voltage is kept at 5V
2SA1705T-AN Applications
There are a lot of ON Semiconductor 2SA1705T-AN applications of single BJT transistors.