NJVMJD2955T4G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 20 @ 4A 4V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 8V @ 3.3A, 10A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.There is a transition frequency of 2MHz in the part.Collector current can be as low as 10A volts at its maximum.
NJVMJD2955T4G Features
the DC current gain for this device is 20 @ 4A 4V
the vce saturation(Max) is 8V @ 3.3A, 10A
the emitter base voltage is kept at 5V
a transition frequency of 2MHz
NJVMJD2955T4G Applications
There are a lot of ON Semiconductor NJVMJD2955T4G applications of single BJT transistors.
- Driver
- Inverter
- Muting
- Interface
