2SA1707S-AN Overview

As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 140 @ 100mA 2V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 350mV.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 700mV @ 100mA, 2A.The base voltage of the emitter can be kept at 6V to achieve high efficiency.In extreme cases, the collector current can be as low as 3A volts.

2SA1707S-AN Features

the DC current gain for this device is 140 @ 100mA 2V
a collector emitter saturation voltage of 350mV
the vce saturation(Max) is 700mV @ 100mA, 2A
the emitter base voltage is kept at 6V

2SA1707S-AN Applications

There are a lot of ON Semiconductor 2SA1707S-AN applications of single BJT transistors.

• Interface
• Muting
• Driver
• Inverter