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2SA2029M3T5G

2SA2029M3T5G

2SA2029M3T5G

ON Semiconductor

2SA2029M3T5G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

2SA2029M3T5G Datasheet

non-compliant

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Specifications
Name Value
Type Parameter
Factory Lead Time 2 Weeks
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Contact Plating Tin
Mounting Type Surface Mount
Package / Case SOT-723
Surface Mount YES
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2009
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Other Transistors
Voltage - Rated DC -50V
Max Power Dissipation 265mW
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Current Rating -100mA
Frequency 140MHz
[email protected] Reflow Temperature-Max (s) 40
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 265mW
Transistor Application AMPLIFIER
Halogen Free Halogen Free
Gain Bandwidth Product 140MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1mA 6V
Current - Collector Cutoff (Max) 500pA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 5mA, 50mA
Collector Emitter Breakdown Voltage 50V
Transition Frequency 140MHz
Collector Emitter Saturation Voltage -500mV
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) 6V
hFE Min 120
Height 550μm
Length 1.25mm
Width 850μm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.398384 $0.398384
10 $0.375834 $3.75834
100 $0.354561 $35.4561
500 $0.334491 $167.2455
1000 $0.315557 $315.557
2SA2029M3T5G Product Details

2SA2029M3T5G Overview


DC current gain in this device equals 120 @ 1mA 6V, which is the ratio of the base current to the collector current.With a collector emitter saturation voltage of -500mV, it offers maximum design flexibility.A VCE saturation (Max) of 500mV @ 5mA, 50mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is -100mA.In this part, there is a transition frequency of 140MHz.When collector current reaches its maximum, it can reach 100mA volts.

2SA2029M3T5G Features


the DC current gain for this device is 120 @ 1mA 6V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
the current rating of this device is -100mA
a transition frequency of 140MHz

2SA2029M3T5G Applications


There are a lot of ON Semiconductor 2SA2029M3T5G applications of single BJT transistors.

  • Muting
  • Driver
  • Inverter
  • Interface

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