2SA2029M3T5G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
2SA2029M3T5G Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
2 Weeks
Lifecycle Status
ACTIVE (Last Updated: 3 days ago)
Contact Plating
Tin
Mounting Type
Surface Mount
Package / Case
SOT-723
Surface Mount
YES
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2009
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
Other Transistors
Voltage - Rated DC
-50V
Max Power Dissipation
265mW
Terminal Position
DUAL
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
260
Current Rating
-100mA
Frequency
140MHz
[email protected] Reflow Temperature-Max (s)
40
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
265mW
Transistor Application
AMPLIFIER
Halogen Free
Halogen Free
Gain Bandwidth Product
140MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
50V
Max Collector Current
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce
120 @ 1mA 6V
Current - Collector Cutoff (Max)
500pA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 5mA, 50mA
Collector Emitter Breakdown Voltage
50V
Transition Frequency
140MHz
Collector Emitter Saturation Voltage
-500mV
Collector Base Voltage (VCBO)
60V
Emitter Base Voltage (VEBO)
6V
hFE Min
120
Height
550μm
Length
1.25mm
Width
850μm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.398384
$0.398384
10
$0.375834
$3.75834
100
$0.354561
$35.4561
500
$0.334491
$167.2455
1000
$0.315557
$315.557
2SA2029M3T5G Product Details
2SA2029M3T5G Overview
DC current gain in this device equals 120 @ 1mA 6V, which is the ratio of the base current to the collector current.With a collector emitter saturation voltage of -500mV, it offers maximum design flexibility.A VCE saturation (Max) of 500mV @ 5mA, 50mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is -100mA.In this part, there is a transition frequency of 140MHz.When collector current reaches its maximum, it can reach 100mA volts.
2SA2029M3T5G Features
the DC current gain for this device is 120 @ 1mA 6V a collector emitter saturation voltage of -500mV the vce saturation(Max) is 500mV @ 5mA, 50mA the emitter base voltage is kept at 6V the current rating of this device is -100mA a transition frequency of 140MHz
2SA2029M3T5G Applications
There are a lot of ON Semiconductor 2SA2029M3T5G applications of single BJT transistors.