2SA2018TL Overview

The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 270 @ 10mA 2V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -100mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 250mV @ 10mA, 200mA.A -500mA continuous collector voltage is necessary to achieve high efficiency.The base voltage of the emitter can be kept at -6V to achieve high efficiency.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -500mA for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 260MHz.Single BJT transistor can take a breakdown input voltage of 12V volts.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.

2SA2018TL Features

the DC current gain for this device is 270 @ 10mA 2V
a collector emitter saturation voltage of -100mV
the vce saturation(Max) is 250mV @ 10mA, 200mA
the emitter base voltage is kept at -6V
the current rating of this device is -500mA
a transition frequency of 260MHz

2SA2018TL Applications

There are a lot of ROHM Semiconductor 2SA2018TL applications of single BJT transistors.

• Muting
• Driver
• Interface
• Inverter