2SC3265-Y,LF Overview

As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 160 @ 100mA 1V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 400mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 400mV @ 20mA, 500mA.Maintaining the continuous collector voltage at 800mA is essential for high efficiency.The base voltage of the emitter can be kept at 5V to achieve high efficiency.Single BJT transistor contains a transSingle BJT transistorion frequency of 120MHz.A breakdown input voltage of 25V volts can be used.Collector current can be as low as 800mA volts at its maximum.

2SC3265-Y,LF Features

the DC current gain for this device is 160 @ 100mA 1V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 20mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 120MHz

2SC3265-Y,LF Applications

There are a lot of Toshiba Semiconductor and Storage 2SC3265-Y,LF applications of single BJT transistors.

• Muting
• Interface
• Inverter
• Driver