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NSS1C200MZ4T1G

NSS1C200MZ4T1G

NSS1C200MZ4T1G

ON Semiconductor

NSS1C200MZ4T1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

NSS1C200MZ4T1G Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 7 Weeks
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Contact Plating Tin
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Surface Mount YES
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2008
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Max Power Dissipation 2W
Terminal Position DUAL
Terminal Form GULL WING
Frequency 120MHz
Base Part Number NSS1C200
Pin Count 4
Number of Elements 1
Element Configuration Single
Power Dissipation 2W
Case Connection COLLECTOR
Power - Max 800mW
Transistor Application SWITCHING
Halogen Free Halogen Free
Gain Bandwidth Product 120MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 100V
Max Collector Current 3A
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 500mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 220mV @ 200mA, 2A
Collector Emitter Breakdown Voltage 100V
Current - Collector (Ic) (Max) 2A
Transition Frequency 120MHz
Max Breakdown Voltage 100V
Collector Base Voltage (VCBO) 140V
Emitter Base Voltage (VEBO) 7V
hFE Min 150
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.070285 $0.070285
500 $0.051680 $25.84
1000 $0.043066 $43.066
2000 $0.039510 $79.02
5000 $0.036926 $184.63
10000 $0.034349 $343.49
15000 $0.033220 $498.3
50000 $0.032665 $1633.25
NSS1C200MZ4T1G Product Details

NSS1C200MZ4T1G Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 120 @ 500mA 2V.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 220mV @ 200mA, 2A.The emitter base voltage can be kept at 7V for high efficiency.Single BJT transistor contains a transSingle BJT transistorion frequency of 120MHz.Single BJT transistor can take a breakdown input voltage of 100V volts.Maximum collector currents can be below 3A volts.

NSS1C200MZ4T1G Features


the DC current gain for this device is 120 @ 500mA 2V
the vce saturation(Max) is 220mV @ 200mA, 2A
the emitter base voltage is kept at 7V
a transition frequency of 120MHz

NSS1C200MZ4T1G Applications


There are a lot of ON Semiconductor NSS1C200MZ4T1G applications of single BJT transistors.

  • Muting
  • Inverter
  • Interface
  • Driver

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