NSS1C200MZ4T1G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 120 @ 500mA 2V.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 220mV @ 200mA, 2A.The emitter base voltage can be kept at 7V for high efficiency.Single BJT transistor contains a transSingle BJT transistorion frequency of 120MHz.Single BJT transistor can take a breakdown input voltage of 100V volts.Maximum collector currents can be below 3A volts.
NSS1C200MZ4T1G Features
the DC current gain for this device is 120 @ 500mA 2V
the vce saturation(Max) is 220mV @ 200mA, 2A
the emitter base voltage is kept at 7V
a transition frequency of 120MHz
NSS1C200MZ4T1G Applications
There are a lot of ON Semiconductor NSS1C200MZ4T1G applications of single BJT transistors.
- Muting
- Inverter
- Interface
- Driver
