MJB41CT4G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
MJB41CT4G Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
8 Weeks
Lifecycle Status
ACTIVE (Last Updated: 4 days ago)
Contact Plating
Tin
Mounting Type
Surface Mount
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Surface Mount
YES
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2005
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Subcategory
Other Transistors
Voltage - Rated DC
100V
Max Power Dissipation
65W
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
6A
Frequency
3MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
MJB41
Pin Count
3
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Polarity
NPN, PNP
Element Configuration
Single
Power Dissipation
2W
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Gain Bandwidth Product
3MHz
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
100V
Max Collector Current
6A
DC Current Gain (hFE) (Min) @ Ic, Vce
15 @ 3A 4V
Current - Collector Cutoff (Max)
700μA
Vce Saturation (Max) @ Ib, Ic
1.5V @ 600mA, 6A
Collector Emitter Breakdown Voltage
100V
Transition Frequency
3MHz
Collector Emitter Saturation Voltage
1.5V
Max Breakdown Voltage
100V
Collector Base Voltage (VCBO)
100V
Emitter Base Voltage (VEBO)
5V
hFE Min
30
Height
4.83mm
Length
10.29mm
Width
9.65mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$1.628520
$1.62852
10
$1.536340
$15.3634
100
$1.449377
$144.9377
500
$1.367337
$683.6685
1000
$1.289940
$1289.94
MJB41CT4G Product Details
MJB41CT4G Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 15 @ 3A 4V DC current gain.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1.5V.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.An emitter's base voltage can be kept at 5V to gain high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 6A.3MHz is present in the transition frequency.There is a breakdown input voltage of 100V volts that it can take.A maximum collector current of 6A volts is possible.
MJB41CT4G Features
the DC current gain for this device is 15 @ 3A 4V a collector emitter saturation voltage of 1.5V the vce saturation(Max) is 1.5V @ 600mA, 6A the emitter base voltage is kept at 5V the current rating of this device is 6A a transition frequency of 3MHz
MJB41CT4G Applications
There are a lot of ON Semiconductor MJB41CT4G applications of single BJT transistors.