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MJB41CT4G

MJB41CT4G

MJB41CT4G

ON Semiconductor

MJB41CT4G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

MJB41CT4G Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Contact Plating Tin
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Surface Mount YES
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -65°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2005
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Subcategory Other Transistors
Voltage - Rated DC 100V
Max Power Dissipation 65W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 6A
Frequency 3MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number MJB41
Pin Count 3
JESD-30 Code R-PSSO-G2
Number of Elements 1
Polarity NPN, PNP
Element Configuration Single
Power Dissipation 2W
Case Connection COLLECTOR
Transistor Application SWITCHING
Gain Bandwidth Product 3MHz
Transistor Type NPN
Collector Emitter Voltage (VCEO) 100V
Max Collector Current 6A
DC Current Gain (hFE) (Min) @ Ic, Vce 15 @ 3A 4V
Current - Collector Cutoff (Max) 700μA
Vce Saturation (Max) @ Ib, Ic 1.5V @ 600mA, 6A
Collector Emitter Breakdown Voltage 100V
Transition Frequency 3MHz
Collector Emitter Saturation Voltage 1.5V
Max Breakdown Voltage 100V
Collector Base Voltage (VCBO) 100V
Emitter Base Voltage (VEBO) 5V
hFE Min 30
Height 4.83mm
Length 10.29mm
Width 9.65mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $1.628520 $1.62852
10 $1.536340 $15.3634
100 $1.449377 $144.9377
500 $1.367337 $683.6685
1000 $1.289940 $1289.94
MJB41CT4G Product Details

MJB41CT4G Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 15 @ 3A 4V DC current gain.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1.5V.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.An emitter's base voltage can be kept at 5V to gain high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 6A.3MHz is present in the transition frequency.There is a breakdown input voltage of 100V volts that it can take.A maximum collector current of 6A volts is possible.

MJB41CT4G Features


the DC current gain for this device is 15 @ 3A 4V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 600mA, 6A
the emitter base voltage is kept at 5V
the current rating of this device is 6A
a transition frequency of 3MHz

MJB41CT4G Applications


There are a lot of ON Semiconductor MJB41CT4G applications of single BJT transistors.

  • Muting
  • Inverter
  • Interface
  • Driver

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