2SB1198KT146Q Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 120 @ 100mA 3V.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 50mA, 500mA.A -500mA continuous collector voltage is necessary to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -500mA current rating.Parts of this part have transition frequencies of 180MHz.Input voltage breakdown is available at 80V volts.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.
2SB1198KT146Q Features
the DC current gain for this device is 120 @ 100mA 3V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is -500mA
a transition frequency of 180MHz
2SB1198KT146Q Applications
There are a lot of ROHM Semiconductor 2SB1198KT146Q applications of single BJT transistors.
- Muting
- Driver
- Inverter
- Interface
