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DXTA42-13

DXTA42-13

DXTA42-13

Diodes Incorporated

DXTA42-13 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

DXTA42-13 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 15 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-243AA
Number of Pins 4
Weight 51.993025mg
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2013
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Max Power Dissipation1W
Terminal Position DUAL
Terminal FormFLAT
Peak Reflow Temperature (Cel) 260
Frequency 50MHz
[email protected] Reflow Temperature-Max (s) 40
Pin Count4
Number of Elements 1
Element ConfigurationSingle
Power Dissipation1W
Case Connection COLLECTOR
Transistor Application SWITCHING
Gain Bandwidth Product50MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 300V
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 30mA 10V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 2mA, 20mA
Collector Emitter Breakdown Voltage300V
Transition Frequency 50MHz
Collector Emitter Saturation Voltage500mV
Collector Base Voltage (VCBO) 300V
Emitter Base Voltage (VEBO) 6V
Height 1.5mm
Length 4.5mm
Width 2.48mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
In-Stock:45277 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.074637$0.074637
500$0.054880$27.44
1000$0.045733$45.733
2000$0.041957$83.914
5000$0.039212$196.06
10000$0.036477$364.77
15000$0.035277$529.155
50000$0.034687$1734.35

DXTA42-13 Product Details

DXTA42-13 Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 40 @ 30mA 10V.With a collector emitter saturation voltage of 500mV, it offers maximum design flexibility.When VCE saturation is 500mV @ 2mA, 20mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 6V can achieve high levels of efficiency.A transition frequency of 50MHz is present in the part.In extreme cases, the collector current can be as low as 500mA volts.

DXTA42-13 Features


the DC current gain for this device is 40 @ 30mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 6V
a transition frequency of 50MHz

DXTA42-13 Applications


There are a lot of Diodes Incorporated DXTA42-13 applications of single BJT transistors.

  • Interface
  • Driver
  • Inverter
  • Muting

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