MJD200RLG Overview

As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 45 @ 2A 1V.The collector emitter saturation voltage is 1.8V, which allows for maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.8V @ 1A, 5A.A high level of efficiency can be achieved if the base voltage of the emitter remains at 8V.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.Parts of this part have transition frequencies of 65MHz.Single BJT transistor can take a breakdown input voltage of 25V volts.Single BJT transistor is possible to have a collector current as low as 5A volts at Single BJT transistors maximum.

MJD200RLG Features

the DC current gain for this device is 45 @ 2A 1V
a collector emitter saturation voltage of 1.8V
the vce saturation(Max) is 1.8V @ 1A, 5A
the emitter base voltage is kept at 8V
the current rating of this device is 5A
a transition frequency of 65MHz

MJD200RLG Applications

There are a lot of ON Semiconductor MJD200RLG applications of single BJT transistors.

• Muting
• Inverter
• Interface
• Driver