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JANTX2N5416S

JANTX2N5416S

JANTX2N5416S

Microsemi Corporation

JANTX2N5416S datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website

SOT-23

JANTX2N5416S Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 20 Weeks
Lifecycle Status IN PRODUCTION (Last Updated: 3 weeks ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-205AD, TO-39-3 Metal Can
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -65°C~200°C TJ
Packaging Bulk
Published 1996
Series Military, MIL-PRF-19500/485
JESD-609 Code e0
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Max Power Dissipation 750mW
Terminal Position BOTTOM
Terminal Form WIRE
Pin Count 3
JESD-30 Code O-MBCY-W4
Qualification Status Qualified
Number of Elements 1
Configuration SINGLE
Power Dissipation 750mW
Case Connection COLLECTOR
Transistor Application SWITCHING
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 300V
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 50mA 10V
Current - Collector Cutoff (Max) 1mA
JEDEC-95 Code TO-5
Vce Saturation (Max) @ Ib, Ic 2V @ 5mA, 50mA
Collector Base Voltage (VCBO) 350V
Emitter Base Voltage (VEBO) 6V
Radiation Hardening No
RoHS Status Non-RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $10.015000 $10.015
10 $9.448113 $94.48113
100 $8.913314 $891.3314
500 $8.408787 $4204.3935
1000 $7.932818 $7932.818
JANTX2N5416S Product Details

JANTX2N5416S Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 30 @ 50mA 10V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 2V @ 5mA, 50mA.An emitter's base voltage can be kept at 6V to gain high efficiency.A maximum collector current of 1A volts can be achieved.

JANTX2N5416S Features


the DC current gain for this device is 30 @ 50mA 10V
the vce saturation(Max) is 2V @ 5mA, 50mA
the emitter base voltage is kept at 6V

JANTX2N5416S Applications


There are a lot of Microsemi Corporation JANTX2N5416S applications of single BJT transistors.

  • Inverter
  • Muting
  • Interface
  • Driver

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