JANTX2N5416S datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website
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JANTX2N5416S Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
20 Weeks
Lifecycle Status
IN PRODUCTION (Last Updated: 3 weeks ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-205AD, TO-39-3 Metal Can
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-65°C~200°C TJ
Packaging
Bulk
Published
1996
Series
Military, MIL-PRF-19500/485
JESD-609 Code
e0
Pbfree Code
no
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn/Pb)
Max Power Dissipation
750mW
Terminal Position
BOTTOM
Terminal Form
WIRE
Pin Count
3
JESD-30 Code
O-MBCY-W4
Qualification Status
Qualified
Number of Elements
1
Configuration
SINGLE
Power Dissipation
750mW
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
300V
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
30 @ 50mA 10V
Current - Collector Cutoff (Max)
1mA
JEDEC-95 Code
TO-5
Vce Saturation (Max) @ Ib, Ic
2V @ 5mA, 50mA
Collector Base Voltage (VCBO)
350V
Emitter Base Voltage (VEBO)
6V
Radiation Hardening
No
RoHS Status
Non-RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$10.015000
$10.015
10
$9.448113
$94.48113
100
$8.913314
$891.3314
500
$8.408787
$4204.3935
1000
$7.932818
$7932.818
JANTX2N5416S Product Details
JANTX2N5416S Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 30 @ 50mA 10V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 2V @ 5mA, 50mA.An emitter's base voltage can be kept at 6V to gain high efficiency.A maximum collector current of 1A volts can be achieved.
JANTX2N5416S Features
the DC current gain for this device is 30 @ 50mA 10V the vce saturation(Max) is 2V @ 5mA, 50mA the emitter base voltage is kept at 6V
JANTX2N5416S Applications
There are a lot of Microsemi Corporation JANTX2N5416S applications of single BJT transistors.