2SA2222 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
2SA2222 Datasheet
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Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Bulk
Published
2008
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)
Max Power Dissipation
2W
Terminal Position
SINGLE
Frequency
230MHz
Pin Count
3
Number of Elements
1
Configuration
SINGLE
Power Dissipation
2W
Transistor Application
SWITCHING
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
50V
Max Collector Current
10A
DC Current Gain (hFE) (Min) @ Ic, Vce
150 @ 270mA 2V
Current - Collector Cutoff (Max)
10μA ICBO
JEDEC-95 Code
TO-220AB
Vce Saturation (Max) @ Ib, Ic
500mV @ 300mA, 6A
Collector Emitter Breakdown Voltage
50V
Current - Collector (Ic) (Max)
10A
Transition Frequency
230MHz
Collector Base Voltage (VCBO)
50V
Emitter Base Voltage (VEBO)
6V
Radiation Hardening
No
RoHS Status
RoHS Compliant
2SA2222 Product Details
2SA2222 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 150 @ 270mA 2V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 300mA, 6A.An emitter's base voltage can be kept at 6V to gain high efficiency.In the part, the transition frequency is 230MHz.A maximum collector current of 10A volts can be achieved.
2SA2222 Features
the DC current gain for this device is 150 @ 270mA 2V the vce saturation(Max) is 500mV @ 300mA, 6A the emitter base voltage is kept at 6V a transition frequency of 230MHz
2SA2222 Applications
There are a lot of ON Semiconductor 2SA2222 applications of single BJT transistors.