2SB1143S Overview
In this device, the DC current gain is 140 @ 100mA 2V, which is the ratio between the base current and the collector current.A collector emitter saturation voltage of -350mV ensures maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 700mV @ 100mA, 2A.Continuous collector voltage should be kept at -4A for high efficiency.Emitter base voltages of -6V can achieve high levels of efficiency.A transition frequency of 150MHz is present in the part.An input voltage of 50V volts is the breakdown voltage.In extreme cases, the collector current can be as low as 4A volts.
2SB1143S Features
the DC current gain for this device is 140 @ 100mA 2V
a collector emitter saturation voltage of -350mV
the vce saturation(Max) is 700mV @ 100mA, 2A
the emitter base voltage is kept at -6V
a transition frequency of 150MHz
2SB1143S Applications
There are a lot of ON Semiconductor 2SB1143S applications of single BJT transistors.
- Interface
- Driver
- Muting
- Inverter
