2SB1202T-TL-E Overview

In this device, the DC current gain is 200 @ 100mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.The collector emitter saturation voltage is -700μV, giving you a wide variety of design options.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 700mV @ 100mA, 2A.With the emitter base voltage set at -6V, an efficient operation can be achieved.The maximum collector current is 3A volts.

2SB1202T-TL-E Features

the DC current gain for this device is 200 @ 100mA 2V
a collector emitter saturation voltage of -700μV
the vce saturation(Max) is 700mV @ 100mA, 2A
the emitter base voltage is kept at -6V

2SB1202T-TL-E Applications

There are a lot of ON Semiconductor 2SB1202T-TL-E applications of single BJT transistors.

• Muting
• Inverter
• Driver
• Interface