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2SB1202T-TL-E

2SB1202T-TL-E

2SB1202T-TL-E

ON Semiconductor

2SB1202T-TL-E datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

2SB1202T-TL-E Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 2 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2004
JESD-609 Code e6
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Tin/Bismuth (Sn/Bi)
Subcategory Other Transistors
Max Power Dissipation 1W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Frequency 150MHz
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number 2SB1202
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 1W
Gain Bandwidth Product 150MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 3A
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 100mA 2V
Current - Collector Cutoff (Max) 1μA ICBO
Vce Saturation (Max) @ Ib, Ic 700mV @ 100mA, 2A
Collector Emitter Breakdown Voltage 50V
Collector Emitter Saturation Voltage -700μV
Collector Base Voltage (VCBO) -60V
Emitter Base Voltage (VEBO) -6V
Height 2.3mm
Length 6.5mm
Width 5.5mm
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.090878 $0.090878
500 $0.066821 $33.4105
1000 $0.055684 $55.684
2000 $0.051087 $102.174
5000 $0.047744 $238.72
10000 $0.044414 $444.14
15000 $0.042953 $644.295
50000 $0.042236 $2111.8
2SB1202T-TL-E Product Details

2SB1202T-TL-E Overview


In this device, the DC current gain is 200 @ 100mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.The collector emitter saturation voltage is -700μV, giving you a wide variety of design options.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 700mV @ 100mA, 2A.With the emitter base voltage set at -6V, an efficient operation can be achieved.The maximum collector current is 3A volts.

2SB1202T-TL-E Features


the DC current gain for this device is 200 @ 100mA 2V
a collector emitter saturation voltage of -700μV
the vce saturation(Max) is 700mV @ 100mA, 2A
the emitter base voltage is kept at -6V

2SB1202T-TL-E Applications


There are a lot of ON Semiconductor 2SB1202T-TL-E applications of single BJT transistors.

  • Muting
  • Inverter
  • Driver
  • Interface

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