2SB1204S-TL-E Overview

In this device, the DC current gain is 140 @ 500mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.As it features a collector emitter saturation voltage of -500mV, it allows for maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 200mA, 4A.Emitter base voltages of 6V can achieve high levels of efficiency.The breakdown input voltage is 50V volts.Collector current can be as low as 8A volts at its maximum.

2SB1204S-TL-E Features

the DC current gain for this device is 140 @ 500mA 2V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 200mA, 4A
the emitter base voltage is kept at 6V

2SB1204S-TL-E Applications

There are a lot of ON Semiconductor 2SB1204S-TL-E applications of single BJT transistors.

• Interface
• Inverter
• Driver
• Muting